2005. 12. 1 1/2 semiconductor technical data USFB13 schottky barrier type diode revision no : 0 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. application switching power supply. reversed battery connection protection. dc/dc converter. cellular phones. maximum rating (ta=25 ) usf a 21 1. anode 2. cathode b cc dim millimeters a b c d d e e e f f g h g h i i j j cathode mark 0.91 0.05 + _ 0.61 0.05 + _ 2.5 0.1 + _ 1.9 0.1 + _ 1.3 0.1 + _ 0.46 0.1 + _ 1.2 0.1 + _ 0.11 0.05 + _ 0.6 0.1 + _ 0.8 0.1 + _ electrical characteristics (ta=25 ) cathode mark type name marking a3 lot no. characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =1.0a - 0.43 0.47 v repetitive peak reverse current i rrm (1) v rrm =5v - 15 40 a i rrm (2) v rrm =30v - 40 200 a junction capacitance c j v r =10v, f=1.0mhz - 30 - pf characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 30 v average output rectified current i o 1 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 5 a power dissipation p d * 667 mw junction temperature t j -40 125 storage temperature range t stg -40 125 * mounted on a glass epoxy board (soldering land : 6mm 6mm)
2005. 12. 1 2/2 USFB13 revision no : 0 0 100 200 300 500 400 1000 1 10 100 ta=150 ? i - v ff f instantaneous forward voltage v (v) c - v jr r reverse voltage v (v) f instantaneous forward current i (a) number of cycles peak surge forward current i (a) 1 0 10 20 fsm max 10 surge forward current (non - repetitive) 100 ta=25 c ta=25 c f=1mhz ta - i f(av) max f(av) average forward current i (a) 0 0 25 50 125 100 75 maximum allowable ambient temperature ta ( c) 0.4 1.2 1.6 0.8 2.0 110 j junction capacitance c (pf) 30 10 100 1000 20 ta=125 ? ta=75 ? ta=25 ? d=1/2 dc 8.3ms 8.3ms 1cyc. 0a 0v i o v r d=t/t v r =15v t j =125 c t t sin ( =180) ?
|
